Products

current position:home page>Products>optical instrument>Gentec-EO>

Gentec-EO PE10B-Si-D0 Photodiode Detector

Updated:2025-01-20

Views:41

Product Details

Gentec-EO PE10B-Si-D0 Photodiode Detector Description:

Datasheet(CN) Datasheet(EN) PC-Gentec-EO User's Manual QE User's Manual INTEGRA User's Manual

Gentec-EO PE10B-Si-D0 Photodiode Detector for laser energy measurement up to 81 nJ.

Measure very low energy, with high accuracy

Silicon photodiode-based energy detectors offer pulse-to-pulse energy measurements for VIS-NIR wavelengths. Our silicon absorber makes it possible to measure very low energy down to the femtojoule level.

Wide dynamic range

Very low noise

Less sensitive to vibrations than pyroelectric detectors

Optional INTEGRA (USB or RS-232) output

When you choose the INTEGRA output option you get an all-in-one measurement instrument that combines both the detector and the meter in one convenient product. Plug the detector in your PC, install our free software and start measuring.

The most cost-efficient solution

Same measurement performance as our other solutions

No compromise on interface functions and features

Compact solution for OEM applications and field servicing

Save money on recalibration with an all-in-one instrument

Key Features

Very low noise level

Take measurements with a noise level as low as 8 fJ (model PE3B-Si only) with the M-LINK, MAESTRO and S-LINK monitors.

3 sensors available

PE-B-SI family: 3 and 10 mm Ø silicon sensors for 0.21 to 1.08 µm

PE5B-GE: 5 mm Ø, germanium sensor for 0.8 to 1.65 µm

PE3B-IN: 3 mm Ø, InGaAs sensor for 0.9 to 1.7 µm

Smart interface

Containing all the calibration data

Specifications

Measurement capabilities
Spectral range 210 - 1080 nm
Typical rise time 30 µs
Maximum repetition frequency 1000 Hz
Maximum measurable energy 81 nJ
Noise equivalent energy 1.5 pJ
Maximum pulse width 10 μs
Energy calibration uncertainty ±18 % (210 - 229 nm)
±8.0 % (230 - 254 nm)
±6.5 % (255 - 399 nm)
±2.5 % (400 - 899 nm)
±4.0 % (900 - 1009 nm)
±7.5 % (1010 - 1080 nm)
Damage thresholds
Maximum average power density 65 mW/cm²
Maximum energy density 5 µJ/cm²
Maximum power 230 μW
Physical characteristics
Aperture diameter 10 mm
Absorber SiUV
Dimensions 38.1Ø x 27.4D mm
Weight 0.09 kg
Distance to sensor face 13.7 mm

WeChat

Customer Service QQ

Customer Hotline:

010-52867770
0l0-52867771
l3811111452
l7896OO5796

Technical Supports

0l0-52867774
l7896OO5796
info@dorgean.com